Band offsets in strained InGaAsP/InGaAsP quantum well optical modulator structures

Band Offsets at Strained-layer Interfaces

Strained-layer heterojunctions and superlattices have recently shown tremendous potential for device applications because of their flexibility for tailoring the electronic band structure. We present a theoretical model to predict the band offsets at both latticematched and pseudomorphic strained-layer interfaces. The theory is based on the localdensity-functional pseudopotential formalism, and ...

The Effects of Strained Multiple Quantum Well on the Chirped DFB-SOA All Optical Flip-Flop

In this paper, based on the coupled-mode and carrier rate equations, a dynamic model and numerical analysis of a multi quantum well (MQW) chirped distributed feedback semiconductor optical amplifier (DFB-SOA)  all-optical flip-flop is precisely derived. We have analyzed the effects of strains of QW and MQW and cross phase modulation (XPM) on the dynamic response, and rise and fall times of the ...

extraction of Band Offsets in Strained Si/Strained Si1-YGey on Relaxed Si1-XGex Dual-Channel enhanced Mobility Structures

In this work, for the first time, the valence band offset, ∆EV, between strained Si and strained Si1-yGey on relaxed Si1-xGex, has been measured using a combination of experimentation and modeling. Such structures have been shown to offer large mobility enhancements for both electrons and holes, and knowledge of the band parameters is critical in order to optimize and predict device behavior [1...

the effects of strained multiple quantum well on the chirped dfb-soa all optical flip-flop

in this paper, based on the coupled-mode and carrier rate equations, a dynamic model and numerical analysis of a multi quantum well (mqw) chirped distributed feedback semiconductor optical amplifier (dfb-soa)  all-optical flip-flop is precisely derived. we have analyzed the effects of strains of qw and mqw and cross phase modulation (xpm) on the dynamic response, and rise and fall times of the ...

Novel electro-optical phase modulator based on GaInAs/InP modulation-doped quantum-well structures